
VVZB 135
I t
150
A
600
A
50 Hz
80 % V RRM
10000
2
V R = 0 V
A s
I T
125
I TSM
500
2
100
400
T VJ = 45°C
T VJ =45°C
75
50
T VJ =125°C
300
200
1000
T VJ =150°C
T VJ =150°C
25
T VJ = 25°C
100
0
0
100
0.0
0.5
1.0
1.5
V
2.0
0.001
0.01
0.1
s
1
1
ms 10
V T
Fig. 3 Forward current versus
voltage drop per leg
t
Fig. 4 Surge overload current
t
Fig. 5 I2t versus time
(per thyristor/diode)
250
W
200
P tot
0.5
R thKA K/W =
0.2
150
A
120
I TAVM
150
1
90
100
50
0
1.5
2
3
5
60
30
0
0
30
60
90
120 A
0
25
50
75
100
125
150
0
25
50
75
100 125 150
I RMS
T A
T C
Fig. 6 Power dissipation versus direct output current and ambient temperature
Fig. 7 Maximum forward current
at case temperature
0.7
K/W
0.6
0.5
Z thJC
0.4
0.3
Constants for Z thJC calculation:
0.2
0.1
R thi / (K/W)
0.03
0.083
0.361
t i / (s)
0.0005
0.008
0.094
0.0
VVZB 135
0.176
0.45
0.001
0.01
0.1
1
s
10
t
Fig. 8 Transient thermal impedance junction to case (per thyristor/diode)
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20070912a
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